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3DD13005 - TRANSISTOR

Key Features

  • Power dissipation www. DataSheet4U. com PCM : 1.5 W£¨ Tamb=25¡æ£© Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ.

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Datasheet Details

Part number 3DD13005
Manufacturer Jiangsu Changjiang Electronics
File Size 314.10 KB
Description TRANSISTOR
Datasheet download datasheet 3DD13005 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation www.DataSheet4U.com PCM : 1.5 W£¨ Tamb=25¡æ£© Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE (sat) f t t 1.BASE 2.