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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
Unit : mm
TRANSISTOR£¨PNP £©
SOT¡ª 23
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
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unless
Test
otherwise
MIN -60 -50 -5
specified£©
TYP MAX UNIT V V V -0.1 -0.