A733LT1 Datasheet | Jiangsu Changjiang Electronics

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors Features Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ Unit : mm TRANSISTOR£¨PNP £© SOT¡ª 23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage .. unless Test otherwise MIN -60 -50 -5 specified£© TYP MAX UNIT V V V -0.1 -0.1 ¦Ì A ¦Ì A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE£¨ 1£©...