BAP50-05W Datasheet | Jiangsu Changjiang Electronics

DESCRIPTION Silicon planar FEATURES z Two elements in mon cathode configuration in a small-sized package z Low diode capacitance z Low diode forward resistance.. APPLICATION General RF applications. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) pin Diodes WBFBP-03Z (2×2×0.5) unit: mm MARKING: W4 W4 1 2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation (TA=90℃) thermal resistance from junction to soldering point Junction temperature Storage temperature range Symbol VR IF Pd Rthj-s Tj TSTG Limits 50 50 150 250 -65~+150 -65~+150 Unit V m A m W K/W ℃ ℃ Electrical Characteristics Parameter @TA=25℃ Symbol VR VF IR Cd1 Cd2 Cd3 r D r D r D τL LS 1.05 1.6 Min. 50 1.1 100 1.1 0.6 0.5 40 25 5 Typ. Max. Unit V V n A p F p F p F Ω Ω Ω μS n H Conditions IR=10µA IF=50m A VR=50V VR=0V,f=1MHz VR=1V,f=1MHz VR=5V,f=1MHz IF=0.5m A , f=100MHz IF=1m A , f=100MHz...