C4115S
Overview
- 15 0.45+ -0.05 zStructure Epitaxial planar type NPN silicon transistor 3Min.
- 4 2.5 + -0.1 5
- 15 0.45 + -0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 20 6 2 5 0.4 150 -55 to +150 Unit V V V A (DC) A (Pulse) ∗ W °C °C ∗ Single pulse Pw=10ms Rev.A 1/3 2SC4115S Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 40 20 6 - - - 120 - - Typ. - - - - - 0.2 - 290 25 Max. - - - 0.1 0.1 0.5 390 - - Unit V V V IC=50µA IC=1mA IE=50µA VCB=30V VEB=5V Conditions µA µA V - MHz pF IC/IB=2A/0.1A VCE=2V, IC=0.1A VCE=2V, IE= -0.5A, f=100MHz VCE=10V, IE=0A, f=1MHz ∗ ∗ Measured using pulse current. zPackaging specifications and hFE Package Code Type 2SC4115S hFE QRS Basic ordering unit (pieces) Taping TP 5000 hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 S 270 to 560 zElectrical characteristic curves 10 5
