DAN2222E
DESCRIPTION
Epitaxial planar Silicon diode FEATURES
: High speed. (trr=1.5ns Typ.) Suitable for high packing density layout High reliability. APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: N
1. ANODE 2. ANODE 3.CATHODE
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.Data Sheet.co.kr
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃
Parameter Peak reverse voltage DC reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO PD Tj Tstg Limits 80 80 300 100 150 150 -55-150
Unit V V m A m A m W
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD trr unless
Test otherwise specified)
MIN 80 0.1 1.2 3.5 4 MAX UNIT V conditions
IR= 100µA VR=70V IF=100m A VR=6V, f=1MHz VR=6V,...
