K596 Overview
.. JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 1.SOURCE K596 Si N-CHANNEL JUNCTION FET FEATURES Power dissipation PCM: 0.1W£¨ Tamb=25¡æ£© Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
