K596
K596 is Si N-CHANNEL JUNCTION FET manufactured by Jiangsu Changjiang Electronics.
FEATURES
Power dissipation PCM: 0.1W£¨ Tamb=25¡æ£© Gate Current I G: 10m A Drain current I D : 1m A Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Gate-Drain breakdown Voltage Gate-Source cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Symbol
2.GATE 3.DRAIN
123 unless otherwise specified£©
MIN -20 -0.6 100 0.4 1.2 3.5 -1.5 800 TYP MAX UNIT V V ¦Ì A m S p F
Test conditions
IG= -100¦Ì A BVGDO . VGS(off) IDSS |YFS| Ciss VDS= 5V , ID=1¦Ì A VDS= 5 V , VGS=0 VDS= 5V , VGS=0, f=1KHz VDS=5V, VGS=0, f=1MHz VDS= 5 V, V GS=0
Data Shee
Output Capacitance
CRSS
0.65 p F f = 1MHz IDSS Classification
Classification IDSS (µA) A 100-170 B 150-240 C 210-350 D 320-480 E 440-800
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.. et4U.
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Data Shee
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TO-92S PACKAGE OUTLINE DIMENSIONS
D D1
¦È
E b
L et4U.
. e e1
Symbol A A1 b c D D1 E e e1 L ¦È
Dimensions In Millimeters Min 1.240 0.660 0.380 0.360 3.850 2.970 3.010 1.270TYP 2.440 15.100 45°TYP 2.640 15.500 Max 1.620 0.860 0.550 0.510 4.150 3.270 3.310 Min
A1
Dimensions In Inches Max 0.064 0.034 0.022 0.020 0.163 0.129 0.130 0.050TYP 0.096 0.594 45°TYP 0.104 0.610 0.056 0.026 0.015 0.014 0.152 0.117 0.119
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