Datasheet Details
| Part number |
K596
|
| Manufacturer |
Jiangsu Changjiang Electronics |
| File Size |
665.04 KB |
| Description |
Si N-CHANNEL JUNCTION FET |
| Datasheet |
 K596 Datasheet
|
|
|
Full PDF Text Transcription for K596 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K596. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO- 92S 1.SOURCE K596 Si N-CHANNEL JUNCTION FET FEATURES Pow...
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ansistors TO- 92S 1.SOURCE K596 Si N-CHANNEL JUNCTION FET FEATURES Power dissipation PCM: 0.1W£¨ Tamb=25¡æ£© Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Gate-Drain breakdown Voltage Gate-Source cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Symbol 2.GATE 3.DRAIN 123 unless otherwise specified£© MIN -20 -0.6 100 0.4 1.2 3.5 -1.5 800 TYP MAX UNIT V V ¦Ì A mS pF Test conditions IG= -100¦Ì A BVGDO DataSheet4U.
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