The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT¡ª 23
KTC4075
FEATURES
TRANSISTOR£¨ NPN £©
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.1 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
Unit : mm
ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat
unless
Test
otherwise
conditions
specified£©
MIN 60 50 5 0.1 0.
KTC4075 Datasheet
