Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007 TRANSISTOR NPN
Features
Power dissipation
PCM : 2 W
Collector current
..
ICM: 8 A Collector-base voltage
Tamb=25
V(BR)CBO : 700 V Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 220
1.BASE 2.COLLECTOR 3.EMITTER
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 1mA IE=0
Collector-emitter breakdown voltage V(BR)CEO Ic= 10m A IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA IC=0
Collector...
