3CD3001 Datasheet | Jiangsu Changjiang

FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE(1) DC current gain h FE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VBE 3 unless otherwise specified) Test conditions MIN 600 400 7 100 200 100 10 5 0.5 1.2 1.1 V V V 40 TYP MAX UNIT V V V µA µA µA Ic= 100µA , IE=0 IC= 1 m A , IB=0 IE= 100 µA, IC=0 VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , IC=0 VCE= 20 V, IC= 20m A VCE= 10V, IC= 0.25 m A IC= 50m A, IB= 10 m A IC= 50 m A, IB= 10m A IE= 100 m A, VCE= 20 V, IC=20m A Transition frequency f T f = 1MHz IC=50m A, IB1=-IB2=5m A, MHz Fall time Storage time tf t S 0.3 1.5 µs µs VCC=45V CLASSIFICATION OF h FE(1) Rank Range 10-15 15-20 20-25 25-30 30-35...