Jiangsu Changjiang KTC3198
Transistors
ELECTRICAL CHARACTERISTICS
£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise MIN 60 50 5 specified£© TYP MAX UNIT V V V 0.1 0.1 ¦Ì A ¦Ì A conditions Ic= 100¦Ì A £¬IE=0 IC=5 mA , IB=0 IE= 100¦Ì A£¬IC=0 VCB=60V , IE=0 VEB= 5V , IC=0 hFE(1) DC current gain VCE=6 V, IC= 2mA VCE=6 V, IC= 150m A IC= 100mA, IB= 10 mA IC= 100mA, IB= 10 mA VCE= 10 V, IC= 1mA 70 25 100 0.1 700 hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) 0.25 1 V V Transition frequency f T 80 F=30MHz MHz CLASSIFICATION OF hFE(1) Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b ¦Õ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.