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S9018LT1 - SOT-23 Plastic Rncapsulate Transistors

Key Features

  • Power dissipation PCM: 0.2 W (Tamb=25℃) 1. 0.

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Datasheet Details

Part number S9018LT1
Manufacturer Jiangsu Changjiang
File Size 35.01 KB
Description SOT-23 Plastic Rncapsulate Transistors
Datasheet download datasheet S9018LT1 Datasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) 1. 0 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) 0. 95 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 2. 4 1. 3 2. 9 1. 9 0.