HBR10150S Description
肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10150S 主要参数 IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） 用途 高频开关电源 低压续流电路和保护电 路 APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications 封装.
HBR10150S Key Features
- mon cathode structure -Low power loss, high efficiency -High Operating Junction
- 40~+150