HBR20150S Description
肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR20150S 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 20（2×10）A 150 V 175 ℃ 0.75V （@Tj=125℃） 用途 高频开关电源 低压续流电路和保护电 路 APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection.
HBR20150S Key Features
- mon cathode structure -Low power loss, high efficiency -High Operating Junction
- 40~+15