HBR30200S Description
肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR30200S 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 30（2×15）A 200 V 175 ℃ 0.80V （@Tj=125℃） 用途 高频开关电源 低压续流电路和保护电 路 APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection.
HBR30200S Key Features
- mon cathode structure -Low power loss, high efficiency -High Operating Junction
- 40~+150