JCS7N60S Description
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS7N60E 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 600 V 1.0Ω 23 nC 用途 ⚫ 高频开关电源 ⚫ 电子镇流器 ⚫ LED 电源 APPLICATIONS ⚫ High frequency switching mode power supply ⚫ Electronic ballast ⚫ LED power supply 产品特性 ⚫ 低栅极电荷 ⚫低 Crss (典型值 5pF) ⚫ 开关速度快 ⚫ 产品全部经过雪崩测试 ⚫高抗 dv/dt 能力 ⚫RoHS.
JCS7N60S Key Features
- Low gate charge -Low Crss (typical 5pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- Derate
- 55～+150
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- 100 μA
- 100 nA
- 100 nA
- 0.8 1.0 Ω
- 1160 1560 pF