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PT4410 - N-Channel MOSFET

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  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 S S 3 4 S G http://www. DataSheet4U. net/ REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless.

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Datasheet Details

Part number PT4410
Manufacturer Jin Yu Semiconductor
File Size 655.78 KB
Description N-Channel MOSFET
Datasheet download datasheet PT4410 Datasheet
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PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5mΩ RDS(ON), Vgs@4.5V, Ids@12A = 15mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 S S 3 4 S G http://www.DataSheet4U.net/ REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
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