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20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A
130mΩ 190mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2301
D
SOT-23(PACKAGE)
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.
SI2301 Datasheet
