Datasheet4U Logo Datasheet4U.com

SI2302 - 20V N-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol.

📥 Download Datasheet

Datasheet Details

Part number SI2302
Manufacturer JinYu
File Size 3.96 MB
Description 20V N-Channel MOSFET
Datasheet download datasheet SI2302 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI2302 N-Channel MOSFET VBsemi
SI2302 N-channel MOSFET MCC
SI2302 20V N-Channel MOSFET VTR
SI2302 N-channel MOSFET YANGJING
SI2302 N-Channel Enhancement Mode Field Effect Transistor HAOHAI

Other Datasheets by JinYu

Part Number Description
SI2300 20V N-Channel MOSFET
SI2301 P-Channel MOSFET
SI2306 20V N-Channel Enhancement Mode MOSFET
SI2312 20V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) 20 ±8 2.3 8 1.25 0.