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XP152A12COMR - 20V P-Channel Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions XP152A12COMR D SOT-23(.

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Datasheet Details

Part number XP152A12COMR
Manufacturer JinYu
File Size 2.28 MB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet XP152A12COMR Datasheet

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20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions XP152A12COMR D SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.20 1.