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BU206DL - Bipolar Junction Transistor

Key Features

  • Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

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Datasheet Details

Part number BU206DL
Manufacturer Jingdao
File Size 113.75 KB
Description Bipolar Junction Transistor
Datasheet download datasheet BU206DL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU206DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-92 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 400 200 9 3.5 0.