DBU103T - Bipolar Junction Transistor

Features

High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

Jingdao

Datasheet Details

Part number	DBU103T
Manufacturer	Jingdao
File Size	108.32 KB
Description	Bipolar Junction Transistor
Datasheet	DBU103T Datasheet
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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. DBU103T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE TO-92 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 VD 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.

Published: Nov 22, 2015 |