S13003DL - Bipolar Junction Transistor

Jingdao

Key Features

Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

S13003DL bipolar junction transistor by Jingdao - Datasheet Preview

Datasheet Details

Part number	S13003DL
Manufacturer	Jingdao
File Size	116.74 KB
Description	Bipolar Junction Transistor
Datasheet	S13003DL Datasheet

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. S13003DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.