S13003DL - Bipolar Junction Transistor

Datasheet Summary

Features

Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

Jingdao

📥 Download Datasheet

Datasheet Details

Part number	S13003DL
Manufacturer	Jingdao
File Size	116.74 KB
Description	Bipolar Junction Transistor
Datasheet	S13003DL Datasheet
Additional preview pages of the S13003DL datasheet.

📁 Similar Datasheet

S13003D - NPN Transistor (ETC)
S1300 - Two-dimensional PSD (HAMAMATSU)
S1300-5MG-BL - LASER DIODES (Roithner)
S1300-5MG-FW - LASER DIODES (Roithner)
S13021-01CT - Photo IC (HAMAMATSU)
S13 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (YS)
S13101 - image sensor (HAMAMATSU)
S13174-01SR - Photo-IC (HAMAMATSU)
S13282-01CR - Photosensors (HAMAMATSU)
S13360 - multi-pixel photon counter (HAMAMATSU)

Other Datasheets by Jingdao

S13003ADL - Bipolar Junction Transistor

Full PDF Text Transcription

Click to expand full text

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. S13003DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.

Published: Feb 11, 2019 |