KT1151 Datasheet PDF - K-Line Microwave Low Noise SiGe Heterojunction Bipolar Transistor Specs

KT1151 - Microwave Low Noise SiGe Heterojunction Bipolar Transistor

This page provides the datasheet information for the KT1151, a member of the KT1151-K Microwave Low Noise SiGe Heterojunction Bipolar Transistor family.

Datasheet Summary

Description

The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.

It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity.

Features

h Operation Voltage: 10 V h Operating Temperature:.
55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types.

Datasheet Details

Part number	KT1151
Manufacturer	K-Line
File Size	500.56 KB
Description	Microwave Low Noise SiGe Heterojunction Bipolar Transistor
Datasheet	KT1151 Datasheet
Additional preview pages of the KT1151 datasheet.

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Full PDF Text Transcription

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Microwave Low Noise SiGe HBT KT1151 Spring 2012 KT1151 Microwave Low Noise SiGe Heterojunction Bipolar Transistor Features h Operation Voltage: 10 V h Operating Temperature: –55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types Applications h RF front end h Communication and instrument system h Satellite receiver h Television antenna h Walkie-talkie and cordless telephone h Remote controller and security apparatus Product Description The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.

Published: Apr 24, 2019 |