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KX105
15 W, 6.0 GHz, GaN HEMT Transistor
DESCRIPTION
The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
High Small Signal Gain: 15 dB @ 4 GHz. High Output Power: 15W PSAT. High Breakdown Voltage, Efficiency and Temperature
Operation.
KX105 Datasheet
