KX105 Overview
The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths...
KX105 Key Features
- High Small Signal Gain: 15 dB @ 4 GHz
- High Output Power: 15W PSAT
- High Breakdown Voltage, Efficiency and Temperature