The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications.
Key Features
High Small Signal Gain: 15 dB @ 4 GHz.
High Output Power: 15W PSAT.
High Breakdown Voltage, Efficiency and Temperature
Operation.
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KX105. For precise diagrams, and layout, please refer to the original PDF.
KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technolog...
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ron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES High Small Signal Gain: 15 dB @ 4 GHz. High Output Power: 15W PSAT. High Breakdown Voltage, Efficiency and Temperature Operation.
KX105 Datasheet
