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SEMICONDUCTOR
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VCO. FEATURES
Low Series Resistance : rS=0.50 Small Package. (Max.)
CATHODE MARK C 1
KDV348E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
E
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range Forward Current
)
SYMBOL VR Tj Tstg IF RATING 10 150 -55¡- 150 ¡É mA 20 ¡É UNIT V
D
B
A
F
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
ESC
Marking
Lot No.
VT
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Reverse Current
)
TEST CONDITION IR=1¥ì A VR=6V VR=6V, TA=85¡É VR=1V, f=1MHz VR=2V, f=1MHz VR=3V, f=1MHz VR=4V, f=1MHz f=1MHz f=1MHz VR=1V, f=470MHz MIN.
KDV348E Datasheet
