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KHB2D0N60F - (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ. ) = 12.5nC K M L J D N N P H 1 2 3 DIM.

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Datasheet Details

Part number KHB2D0N60F
Manufacturer KEC
File Size 103.36 KB
Description (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
Datasheet download datasheet KHB2D0N60F Datasheet

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A O C F E G B Q I FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1. GATE 2. DRAIN 3.