KHB2D0N60F - (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor

Product Overview

KEC semiconductor

Datasheet Details

Part number	KHB2D0N60F
Manufacturer	KEC semiconductor
File Size	103.36 KB
Description	(KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
Datasheet	KHB2D0N60F Datasheet
Additional preview pages of the KHB2D0N60F datasheet.

Product details

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ. ) = 12.5nC K M L J D N N P H 1 2 3 DIM.

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Published: Sep 3, 2007 |