KHB2D0N60P Datasheet | KEC

Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A O C F E G B Q I FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5n C K M L J D N N DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) TO-220AB RATING SYMBOL KHB2D0N60P KHB2D0N60F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 54 0.43 150 -55 150 2.0 1.3 6.0 120 5.4 5.5 23 0.18 600 30 2.0- 1.3- 6.0- m J UNIT V A C F O E G P B m J V/ns W W/ L J D M M H Q DIM MILLIMETERS _ 0.2 10.16 + A _ 0.2 15.87 + B _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 12.57 + G _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 O 6.68 + P 6.5 _ 0.2 Q 2.76 + Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to Ambient 1. GATE 2. DRAIN 3. SOURCE Rth JC Rth CS Rth JA 2.32 0.5 62.5 5.5 62.5 /W /W /W TO-220IS - : Drain current limited by maximum junction temperature. 2005. 10. 24 Revision No : 1 1/7 .. KHB2D0N60P/F...