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KHB6D0N40P - (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs

This page provides the datasheet information for the KHB6D0N40P, a member of the KHB6D0N40F (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ. )=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM.

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Datasheet Details

Part number KHB6D0N40P
Manufacturer KEC semiconductor
File Size 104.53 KB
Description (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs
Datasheet download datasheet KHB6D0N40P Datasheet
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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A KHB6D0N40P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q I FEATURES VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.
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