KHB7D0N65P1 Datasheet | KEC

Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32n C K M L J D N N DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KHB7D0N65P1 KHB7D0N65F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 160 1.28 150 1. GATE 2. DRAIN 3. SOURCE UNIT 650 30 7 4.2 28 212 1.6 4.5 52 0.42 7- 4.2- 28- m J m J V/ns W W/ D H E G P TO-220AB Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient -55 150 N 1 2 3 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS _ 0.2 10.16 + A _ 0.2 15.87 + B _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 12.57 + G _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 O 6.68 + P 6.5 _ 0.2 Q 2.76 + Rth JC Rth CS Rth JA 0.78 0.5 62.5 2.4 62.5 /W /W /W TO-220IS - : Drain current limited by maximum junction temperature. 2006. 2. 20 Revision No : 1 1/7 .. KHB7D0N65P1/F1...