KEC 1D0N60D
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.| Part No. | 1D0N60D |
|---|---|
| Datasheet | 1D0N60D Download |
| Manufacturer |  KEC |
| Description | KHB1D0N60D |
| Buy | Stock & Price |
GENERAL DESCRIPTION
KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR A C D I J BFEATURES
VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 + 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Ta=25 Derate above 25 ) RATING SYMBOL KHB1D0N60D KHB1D0N60I VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 28 0.22 150 -55 150 1.0 0.57 3.0 50 2.8 5.5 28 0.22 600 30 1.0* 0.57* 3.0* mJ mJ G DPAK UNIT V A V I D C J A O N H K B M E V/ns W W/ 1 F F L DIM MILLIMETERS _ 0.2 A 6.6 + _ 0.2 B 6.1 + _ 0.3 C...
