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2D0N60P - KHB2D0N60P

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : www. DataSheet4U. com K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q RDS(ON)=5.0 @VGS = 10V Qg(typ. ) = 10.9nC 1 2 3.

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Datasheet Details

Part number 2D0N60P
Manufacturer KEC
File Size 535.92 KB
Description KHB2D0N60P
Datasheet download datasheet 2D0N60P Datasheet
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SEMICONDUCTOR TECHNICAL DATA General Description KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB2D0N60P A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : www.DataSheet4U.com K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC 1 2 3 MAXIMUM RATING (Tc=25 ) RATING 1. GATE 2. DRAIN 3.
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