Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
EPITAXIAL PLANAR NPN TRANSISTOR
Features
Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. plementary to 2N3906SC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC 200
Base Current
IB 50
Collector Power Dissipation
- 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
- PC : Package Mounted On 99.5% Alumina 10 8 0.6...
