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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
20
Continuous
ID 300
Drain Current
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2)
PD 300
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
UNIT V V
mA
mW
EQUIVALENT CIRCUIT D
G
A G H
D
2N7002K
N Channel MOSFET ESD Protected 2000V
E L BL
23 1
PP
M 1. SOURCE 2. GATE 3.
2N7002K Datasheet
