KEC 2N7002K
N Channel MOSFET
| Part No. | 2N7002K |
|---|---|
| Datasheet | 2N7002K Download |
| Manufacturer |  KEC |
| Description | N Channel MOSFET |
| Buy | Stock & Price |
FEATURES
ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS 20 Continuous ID 300 Drain Current Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) UNIT V V mA mW EQUIVALENT CIRCUIT D G A G H D 2N7002K N Channel MOSFET ESD Protected 2000V E L BL 23 1 PP M 1. SOURCE 2. GATE 3. DRAIN DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J Marking WCType Name Lot No. SELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage D...
