KEC 2N7002KA
N-Channel MOSFET
FEATURES
ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-toAmbient (Note 2) VDSS VGSS ID IDP PD Tj Tstg 60 20 300 1200 350 150 -55 150 Rth(j-a) 357 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on 99% Alumina 10 8 0.6mm EQUIVALENT CIRCUIT D UNIT V V mA mW /W G 2N7002KA N Channel MOSFET ESD Protected 2000V E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN SOT-23 Marking Type Name 2P Lot No. S ELECTRI...