• Part: BAS23W
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 424.74 KB
Download BAS23W Datasheet PDF
BAS23W page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. Features High Reliability. Small surface mounting type (USM). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VRM VR 300 250 Continuous Forward Current IF 200 Surge Current (10mS) IFSM Power Dissipation PD 200 - Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : - Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW SILICON EPITAXIAL PLANAR DIODE DIM MILLIMETERS 2.00+_ 0.20 2 B 1.25+_ 0.15 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_...