KEC BAS23W
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAS23W |
|---|---|
| Datasheet | BAS23W Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
High Reliability. Small surface mounting type (USM). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VRM VR 300 250 Continuous Forward Current IF 200 Surge Current (10mS) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW BAS23W SILICON EPITAXIAL PLANAR DIODE A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. CATHODE 1 2. ANODE 2 3. ANODE 1/ CATHODE 2 3 21 USM Marking Type Name JE Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF IR(1) IR(2) CT trr TEST CONDITION IF=150mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. - TYP. - MAX. 1.25 0.2 100 3 100 UNIT A pF nS 2009.