KEC BAW56
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAW56 |
|---|---|
| Datasheet | BAW56 Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
● Small Package : SOT-23.● Low Forward Voltag : VF=0.92V(Typ.).
● Fast Reverse Recovery Time : trr=1.6ns(Typ.).
● Small Total Capacitance : CT=2.2pF(Typ.).
● Suffix U : Qualified to AEC-Q101. ex) BAW56-RTK/HU MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) VRM 85 VR 80 IF 250 IFSM 2 Power Dissipation 225* PD 300** Junction Temperature Tj 150 Storage Temperature Range Tstg -55 ~ 150 * Note1 : Package Mounted On FR-5 Board (25.4 x 19.05 x 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 x 8 x 0.6mm) UNIT V V mA A mW ℃ ℃ A G H D E LB L 2 3 1 Unit : mm DIM MILLIMETERS A 2.93 ± 0.20 B 1.30+0.20/-0.15 C 1.0+0.3/-0.1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 ± 0.10 H 0.95 ± 0.10 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 ± 0.10 M 0.20 MIN N 1.00+0.20/-0.10 C N K J 1. CATHODE 1 2. CATHODE 2 3. ANODE M SOT-23 3 2 1 Marking Type Name H6 Lot No.
ELECTRICAL CHARACTERISTICS
(Ta=25℃) CHA...