KEC BC860
EPITAXIAL PLANAR PNP TRANSISTOR
| Part No. | BC860 |
|---|---|
| Datasheet | BC860 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage BC859 BC860 V(BR)CEO IC=-10mA, IB=0 Collector-Base Breakdown Voltage BC859 BC860 Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure V(BR)CBO V(BR)EBO ICBO hFE VBE(ON) 1 VBE(ON) 2 VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 fT Cob NF Note : hFE Classification A:125 250, B:220 475 IC=-10 A, IE=0 IE=-10 A, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-200 A, VCE=-5V Rg=10k , f=1kHz Marking MARK SPEC TYPE MARK BC859A 4A BC859B 4B BC860A 4E BC860B 4G Type Name C N K J A G H D E L BL 23 1 PP M DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 P7 Q 0.1 MAX 1.