KEC BF421
Silicon PNP Transistor
APPLICATIONS
.FEATURES
High Voltage : VCEO>-300V Complementary to BF420. BF421 SILICON PNP TRIPLE DIFFUSED TYPE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Base Current Junction Temperature VCBO VCEO VEBO IC ICP PC IB Tj Storage Temperature Range Tstg RATING -300 -300 -5 -50 -100 625 -50 150 -65 150 UNIT V V V mA mW mAELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Reverse Transfer Capacitance ICBO IEBO hFE VCE(sat) VBE fT Cre TEST CONDITION VCB=-200V, IE=0 VCB=-200V, IE=0, Tj=150 VEB=-5V, IC=0 VCE=-20V, IC=-25mA IC=-30mA, IB=-5mA VCE=-20V, IC=-25mA VCE=-10V, IC=-10mA VCB=-30V, IE=0, f=1MHz MIN. 50 60 - TYP. MAX. UNIT - -10 nA - -10 A - -50 nA - 300 - - -0.6 V -0.75 - V - - MHz - 1.6 pF 2012. 3. 14 Revision No : 4 1/3 BF421 2012.