KEC BF422
Silicon NPN Transistor
APPLICATIONS
.FEATURES
High Voltage : VCEO>250V Complementary to BF423. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Base Current Junction Temperature VCBO VCEO VEBO IC ICP PC IB Tj Storage Temperature Range Tstg RATING 250 250 5 50 100 625 50 150 -65 150 UNIT V V V mA mW mA L M C BF422 SILICON NPN TRIPLE DIFFUSED TYPE BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Reverse Transfer Capacitance ICBO IEBO hFE VCE(sat) VBE fT Cre TEST CONDITION VCB=200V, IE=0 VCB=200V, IE=0, Tj=150 VEB=5V, IC=0 VCE=20V, IC=25mA IC=30mA, IB=5mA VCE=-20V, IC=25mA VCE=10V, IC=10mA VCB=30V, IE=0, f=1MHz MIN.