ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V(Min.) POLARITY E25A2CPS (+ Type) E25A2CPR (- Type) E25A2CPS, E25A2CPR STACK SILICON DIFFUSED DIODE D F2 E F1 G B L1 L2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Repetitive Peak Reverse Voltage VRRM Non-Repetitive Peak Reverse Voltage PRM Average Forward Current IF(AV) Peak 1 Cycle Surge Current IFSM Junction Temperature Storage Temperature Range Tj Tstg RATING 200 1.35 (Pulse duration 30ỌS Non-repetitive) 25 250 (10mS Condition Half sine wave 1 cycle) -40ᴕ200 -40ᴕ200 UNIT V kW A A ᴱ ᴱ A DIM MILLIMETERS DIM MILLIMETERS A Φ11.7+0.1/-0 F1 0.32 B 3.85+0/-0.2 D Φ1.45+_ 0.1 F2 G 3.1 0.5 E 1.55 L1 8.4 MAX DIM TYPE POLARITY L2 S R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 PF
ELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Reverse Recovery Time VFM VRM IRRM trr Transient Thermal Resistance ẤVF Reverse Leakage Current Under High Temperature HIR Temperat...
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