KEC E30A27VR
STACK SILICON DIFFUSED DIODE
FEATURES
Average Forward Current : IO=30A. POLARITY E30A27VS E30A27VR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL DC Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Non-Repetitive Reverse 1 Cycle Surge Current VDC IF(AV) IFSM IRSM Junction Temperature Tj Storage Temperature Range Tstg RATING 24 30 250 (50Hz) 50 -40 150 -40 150 UNIT V A A A D2 H T D1 C1 B1 C2 B2 E30A27VS, E30A27VR STACK SILICON DIFFUSED DIODE A3 A2 D3 A1 E FG DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS 10.0 +_0.3 13.5 +_0.3 24.0 +_0.5 8.5 +_0.3 10.0 +_ 0.3 2.0 +_ 0.3 5.0 +_0.3 2.5+_ 0.3 DIM D2 D3 E F G H T MILLIMETERS 5.0 +_0.3 4.5+_ 0.3 1.9+_ 0.3 9.0 +_0.3 1.0+_ 0.3 4.4+_ 0.5 0.6+_ 0.3 MRELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Zener Voltage Peak Forward Voltage Repetitive Peak Reverse Current Zener Voltage Temperature Coefficient Reverse Recovery Time VZ VFM IRRM rZ trr Temperature Resistance Rth TEST CONDITION IZ=10mA IFM=100A VRRM=24V IZ=10mA IF=0.1A, IR=0.1A DC total junction to case MIN.