FEATURES
Average Forward Current : IO=30A. Reverse Voltage : 200V(Min) POLARITY E30A2CDS E30A2CDR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Repetitive Peak Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current VRRM IF(AV) IFSM 200 30 300 (10ms Condition) Junction Temperature Tj -40 200 Storage Temperature Range Tstg -40 200 UNIT V A A E30A2CDS, E30A2CDR STACK SILICON DIFFUSED DIODE FE L1 CD L2 G B A DIM A B C D MILLIMETERS 9.5+_ 0.2 8.4+_ 0.2 1.2 1 DIM E F G L1 MILLIMETERS 3.1+_ 0.1 Φ1.5 R0.5 5+_ 0.4 DIM TYPE POLARITY L2 S R MILLIMETERS 19.0+_ 1.0 23.0+_ 1.0 PD ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Reverse Recovery Time Reverse Leakage Current Under High Temperature VFM VRM IRRM trr HIR Temperature Resistance Rth TEST CONDITION IFM=100A IR=5mA VR=200V IF=-IR 100mA Ta=150 , VR=VRM Junction to case MIN. - 200 - - - TYP. - - 1.0 MAX. 1.20 50 15 UNIT V V A S 2.5 mA - /W 2002.
KEC