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F1B2CCI - STACK SILICON DIFFUSED DIODE

Features

  • ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type.

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Datasheet Details

Part number F1B2CCI
Manufacturer KEC Corporation
File Size 74.04 KB
Description STACK SILICON DIFFUSED DIODE
Datasheet download datasheet F1B2CCI Datasheet
Additional preview pages of the F1B2CCI datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type. POLARITY ᴌCC TYPE ᴌCATHODE COMMON 13 ᴌCA TYPE ᴌANODE COMMON 13 22 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Repetitive Peak Reverse Voltage F1B2CCI F1B2CAI Average Output Rectified Current (Tc=101ᴱ) (Fig.) Peak One Cycle Surge Forward Current (Non-Repetitive) Junction Temperature Storage Temperature Range SYMBOL VRRM IO IFSM Tj Tstg RATING 200 10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150 UNIT V A A ᴱ ᴱ GF B P A U E S K T LL M DD J NN T T 123 C DIM A B C D E F G RH J K L VM N O P Q HR S T U V MILLIMETERS 10.
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