F1B2CCI
F1B2CCI is STACK SILICON DIFFUSED DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
Features
ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type.
POLARITY ᴌCC TYPE ᴌCATHODE MON
ᴌCA TYPE ᴌANODE MON
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
F1B2CCI F1B2CAI
Average Output Rectified
Current (Tc=101ᴱ) (Fig.)
Peak One Cycle Surge Forward Current (Non-Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL VRRM
IFSM Tj Tstg
RATING 200
10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150
UNIT V A
A ᴱ ᴱ
GF B...
