KEC F60N06P
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/DC Converters and switching mode power supplies.| Part No. | F60N06P |
|---|---|
| Datasheet | F60N06P Download |
| Manufacturer |  KEC |
| Description | KF60N06P |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48nC D N N A KF60N06P N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + MOSFET MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25¡ Drain Current @TC=100¡ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25¡ Derate above 25¡ Tj Tstg VDSS VGSS Unless otherwise noted) RATING 60 ¡¾ 20 60 37 230 430 13.5 4.5 113 0.90 150 ¡ ¡ -55¡› 150 mJ mJ V/ns W W/¡ A UNIT V V 1 2 3 SYMBOL 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB I D* IDP EAS EAR dv/dt PD Maximum Junction Temperature Storage Temperature R...
