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SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications.
FEATURES Array type (4 Diode in one package) Low Capacitance Low Series resistance
KDP610UL
SILICON EPITAXIAL PIN TYPE DIODE
TENTATIVE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
SYMBOL VR IF Tj Tstg
RATING 30 100 150
-55 150
UNIT V mA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current Forward Voltage Total Capacitance Series Resistance
IR VF CT rs
ESD-Capability *
-
* Failure cirterion : IR>100nA at VR=30V.
TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse
MIN. -
TYP. -
MAX. 0.1 1.0 0.30 1.3
UNIT A V pF
100 -
-V
2008. 1.
KDP610UL Datasheet
