KEC KDP610UL
SILICON EPITAXIAL PIN TYPE DIODE
FEATURES
Array type (4 Diode in one package) Low Capacitance Low Series resistance KDP610UL SILICON EPITAXIAL PIN TYPE DIODE TENTATIVE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mAELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Forward Voltage Total Capacitance Series Resistance IR VF CT rs ESD-Capability * - * Failure cirterion : IR>100nA at VR=30V. TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. - TYP. - MAX. 0.1 1.0 0.30 1.3 UNIT A V pF 100 - -V 2008. 1. 22 Revision No : 0 1/2 KDP610UL 2008. 1. 22 Revision No : 0 2/2