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SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : ESM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range * : Unit Rating. Total Rating=Unit Rating 1.5
VRM VR IFM IO IFSM PD Tj Tstg Topr
RATING 15 10
100 * 50 * 1* 100 125 -55 125 -40 100
UNIT V V mA mA A mW
C
A G H
KDR331E
SCHOTTKY BARRIER TYPE DIODE
E
B
DIM MILLIMETERS A 1.60+_ 0.10
2 D B 0.85+_ 0.10
13
C 0.70+_ 0.10
D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1. ANODE 1 2. ANODE 2 3.
KDR331E Datasheet
