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SEMICONDUCTOR
TECHNICAL DATA
KDR412
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FEATURES Small Surface Mounting Type. (USC) Low Forward Voltage : VF max=0.5V High Reliability
CONSTRUCTION Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range
SYMBOL VRM VR IO IFSM Tj Tstg
RATING 40 20 0.5 3 125
-40 +125
UNIT V V A A
CATHODE MARK E A K
F L
B 1
2 D
MM 1. ANODE 2. CATHODE
G
H
J C I
DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4 L 2 +4/-2 M 4~6
USC
Marking
Lot No.
KDR412 Datasheet
