KEC KDR760E
SCHOTTKY BARRIER TYPE DIODE
FEATURES
hLow Forward Voltage : VF=0.66V(Max). hIO=200mA recification possible.APPLICATIONS
hUltra high-speed swiching. hProtection circuits. hLow voltage rectification. hLow power consumption applications. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL Reverse Voltage VR Average Forward Current IO Forword Surge Current IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg * Mounted on a glass epoxy circuit board of 2020mm pad dimension of 44mm RATING 60 200 2.5 150* 150 -55q150 UNIT V mA A mW KDR760E SCHOTTKY BARRIER TYPE DIODE CATHODE MARK B A C E 1 2 D F DIM A B C D E F MILLIMETERS 1.60 +_0.05 1.20 +_0.05 0.80 +_0.05 0.30+_ 0.05 0.60+_ 0.05 0.13+_ 0.05 1. ANODE 2 1 2. CATHODE ESC Marking CATHODE MARK DA 2 1 TYPE MARKELECTRICAL CHARACTERISTICS
(Ta=25) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current IR TEST CONDITION IF=10mA IF=100mA IF=200mA VR=10V VR=60V MIN. - TYP. - MAX. 0.3 0.47 0.66 10 100 UNIT V ǺA 2014. 11. 05 Revision No : 0 1/2 KDR760E 2014.