• Part: KDS135
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: KEC
  • Size: 68.33 KB
Download KDS135 Datasheet PDF
KEC
KDS135
FEATURES ᴌHigh Reliability. ᴌSmall surface mounting type (USC). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10m S) IFSM Power Dissipation Junction Temperature Tj Storage Temperature Range Tstg - Mounted on a glass epoxy cirvuit board of 20ᴧ20mm Pad dimension of 4ᴧ4mm RATING 300 250 300 100 2 150- 150 -55ᴕ150 UNIT V V m A m A A m W ᴱ ᴱ SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K B 1 2 D MM 1. ANODE 2. CATHODE DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total...