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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
VRM
Reverse Voltage
VR
Maximum (Peak) Forward Current
IFM
Average Forward Current
IO
Surge Current (1 s)
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
RATING 20 20
200 * 100 * 300 * 100 150 -55 150
UNIT V V mA mA mA mW
A G H
KDS142E
SILICON EPITAXIAL PLANAR DIODE
C
E
B
DIM MILLIMETERS A 1.60+_ 0.10
2 D B 0.85+_ 0.10
13
C 0.70+_ 0.10
D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1. CATHODE 1 2. ANODE 2 3.
KDS142E Datasheet
